Protection circuit device using MOSFETs and a method of manufacturing the same

ABSTRACT

A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET, and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates a protection circuit device using MOSFETand method of manufacturing the same, particularly enabling to build ina secondary battery and carrying out battery management.

2. Description of the Related Art

As the spread of pocketable terminal, small lithium ion battery havinglarge capacity is desired. A protection circuit device carrying outbattery management of charge-discharge of the lithium ion battery mustbe smaller and sufficiently resist to short of load. As such protectioncircuit device is built in vessel of lithium ion battery,miniaturization is required, and freely using COB (Chip on Board)technique using many chip parts meets require of miniaturization.However on the other hand, as switching element is connected to lithiumion battery in series, it is needed to make ON-state resistance of theswitching element extremely small. This is indispensable factor tolengthen talking time or stand-by time in pocket telephone.

A protection circuit carrying out concrete battery management is shownin FIG. 19. Two power MOSFETs Q1 and Q2 are connected to a lithium ionbattery LiB in series to detect voltage of the lithium ion battery LiBwith a control IC. The detection carries out on-off control of the twopower MOSFETs Q1 and Q2, and the lithium ion battery LiB is protectedfrom over-charge, over-discharge, or load short. The power MOSFETs Q1and Q2 connect drain electrodes D in common, source electrodes S arearranged respectively at both ends thereof, and gate electrode G of eachMOSFETs is connected to the control IC.

At charge, a power source is connected to ends of the circuit, andcharge current is applied to the lithium ion battery LiB to arrowdirection so as to charge. When the lithium ion battery LiB becomesover-charge state, voltage is detected by the control IC, gate voltageof the power MOSFET Q2 becomes L (low level) from H (high level), andthe power MOSFET Q2 becomes off and cuts the circuit so as to protectthe lithium ion battery LiB.

At discharge, both ends of the circuit are connected to a load andoperation of a pocketable terminal till designated voltage. However whenthe lithium ion battery LiB becomes over-discharge state, voltage isdetected by the control IC, gate voltage of the power MOSFET Q1 becomesL from H, and the power MOSFET Q1 becomes off and cuts the circuit so asto protect the lithium ion battery LiB.

Moreover at load shot or over-current, much current flows the powerMOSFETs Q1 and Q2 so that voltage of both ends of the power MOSFETs Q1and Q2 suddenly rises. Because of that, the voltage is detected by thecontrol IC, and similarly at discharge the power MOSFET Q1 becomes offand cuts the circuit so as to protect the lithium ion battery LiB.However as large current flows at short time till the protection circuitoperates, it is required that peak drain rash current flows much to thepower MOSFETs Q1 and Q2.

As two N-channel type power MOSFETs Q1 and Q2 are connected to thelithium ion battery LiB in series in the protection circuit,low-ON-state resistance (R_(DS(on))) of power MOSFETs Q1 and Q2 is mostrequired point. Therefore development raising sell density by fine pitchmachining at manufacturing the chip is driven forward.

In detail, although sell density was 7.4 million per a square inch andON-state resistance was 17 mΩ in planer structure that a channel isformed on a semiconductor substrate surface, at first generation oftrench structure forming a channel at side face of trench, sell densityis extremely improved in 25 million per a square inch and ON-stateresistance is decreased in 27 mΩ. Further in second generation of thetrench structure, sell density is 72 million per a square inch andON-state resistance is decreased in 12 mΩ). However making fine haslimit, and there is a limit to decrease ON-state resistance extremely.

FIG. 20 is a plan view describing a protection circuit device mountingsuch a power MOSFET improved in sell density. Although circuit partsshown in FIG. 19 are mounted actually, the parts are not shown all inthe figure. A conductive path 2 comprising-copper foil is formed on bothface of an insulating board 1, and has multilayer interconnection wherethe conductive paths 2 of upper face and lower face of the board areconnected through through-hole (not shown) at desired position. PowerMOSFETs 3 and 4 are resin-molded in an external form of SOPB for surfacemounting, two terminals 5 and 5 connected to drain electrodes go out atone side, and at the opposite side, a gate terminal 7 connected to agate electrode and a source terminal 8 connected to a source electrodego out. Symbol 9 is a control IC, symbol 10 are chip capacitorscorresponding to C1 to C3 of FIG. 19, and symbol 11 are chip resisterscorresponding to R1 and R2 of FIG. 19. Symbols 12 and 13 are externalterminals corresponding to LP2 and LP3 of FIG. 19. The externalterminals are fixed on pads 14 formed at part of the conductive path 2by solder. Although the protection circuit device is formed in asuitable shape to put in the case of the lithium ion battery,miniaturization is the largest problem for fundamental needs.

FIG. 21 shows a section structure of the power MOSFETs 3 and 4. A frameis a pressed frame comprising NK-202 (copper 97.6%, tin 2%) as material,and a bare chip 23 of the power MOSFET is fixed with a preform material22 comprising solder or silver paste on a header 21 of the frame. Adrain electrode is formed by gold lining electrode (not shown) on lowerface of the bare chip 23 of the power MOSFET, and on upper face, a gateelectrode and a drain electrode are formed by deposition of Aluminum. Asconnected to a header 21, a drain terminal of the frame is connected tothe drain electrode directly, and the gate electrode and the sourceelectrode are electrically connected to a gate terminal 7 and a sourceterminal 8 by ball bonding using gold bonding wire 24. ThereforeON-state resistance of power MOSFET is influenced ON-state resistanceexisting in frame material, preform material, material for the bondingwire, and electrode material of the source electrode on the upper faceof the chip for decreasing ON-state resistance.

FIG. 22 and FIG. 23 are plan view describing the prior art decreasingON-state resistance devising bonding wire. FIG. 22 is a view wherecurrent capacity is improved by increasing the bonding wire 24connecting the source electrode and the source electrode 8 to fourwires. Further FIG. 22 is a view where current capacity is improved byincreasing the bonding wire 24 connecting the source electrode and thesource electrode 8 to four wires, two short wires and long two wires,and where resistance of the source electrode is decreased by broadeningbonding portion to the source electrode.

Difference of ON-state resistance depending on the conventional mountingstructure of power MOSFET is completed in FIG. 18. Sample A and Sample Bare the conventional mold structure of SOPB, Sample A corresponds to thestructure of FIG. 22, and Sample B corresponds to the structure of FIG.23. These figures show, in the case that bonding wires is changed tocombination of two short wires and two long wires from four short wires,decrease of ON-state resistance of 1.33 mΩ, from 13.43 mΩ to 12.10 mΩ,however changing solder to Ag paste can not decrease ON-stateresistance.

However a present state is that small, light weight pocketable terminaland long life of built-in battery thereof are more strongly required. Inthe sate, there is a problem that useful solving means breaking downmounting structure of protection circuit device using power MOSFET,realizing low ON-state resistance, and realizing small protectioncircuit device using MOSFET is not found out.

SUMMARY OF THE INVENTION

The invention is carried out from the aspect of above problems.

The object of the present invention is to provide a protection circuitdevice using power MOSFET for realizing low ON-state resistance andreducing size of the device.

The protection circuit device using a MOSFET connects two MOSFET inseries and switches said both MOSFETs. In the device, a conductive pathhaving a desired pattern is provided on an insulating board, each gateelectrode and each source electrode of a MOSFET chip integrating saidboth MOSEET in one chip are fixed on the desired conductive path, andconductive material is put on a common drain electrode provided at aback face of said MOSFET chip. Namely, each gate electrode and eachsource electrode of a MOSFET chip integrating said both MOSFET in onechip are fixed on a conductive path having a low resistance, providedoutside the chip. The MOSFET chip is fixed on the conductive path byflip chip method and conductive path of common drain electrode isremoved so as to realize low ON-state resistance and miniaturization.

In the invention, a protection circuit device using MOSFETs theprotection circuit using the MOSFET connects two MOSFET and switchessaid both MOSFETs with a control IC. A conductive path of a desiredpattern buried in an insulating resin is provided, each gate electrodeand each source electrode of a MOSFET chip integrating said both MOSFETin one chip are fixed on the desired conductive path, and conductivematerial is put on a common drain electrode provided at a back face ofsaid MOSFET chip.

Removing an insulating board having supporting function, a small andthin device is realized.

In the invention, a method for manufacturing a protection circuit deviceusing MOSFET has process providing a conductive foil and forming aconductive path by forming a thinner trench than thickness of saidconductive foil on at least said conductive foil except area becomingthe conductive path, process fixing each gate electrode and each sourceelectrode of a MOSFET integrating two MOSFETs on said desired conductivepath in one chip, process bonding conductive material on a commonelectrode of the MOSFET, process covering said MOSFET and molding withinsulating resin so as to fill into said trench, and process removingsaid conductive foil of part of thickness where said trench is notprovided. Therefore, efficient method for manufacturing a protectioncircuit device using a MOSFET is realized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view describing a protection circuit device using aMOSFET of the invention.

FIG. 2A is a plan view and FIG. 2B is a section view, cut by X-X line ofa MOSFET chip for a protection circuit device using a MOSFET of theinvention.

FIG. 3 is a section view describing a first mode for carrying out of aprotection circuit device using a MOSFET of the invention.

FIG. 4 is a section view describing a second mode for carrying out of aprotection circuit device using a MOSFET of the invention.

FIG. 5 is a section view describing a first mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 6 is a section view describing a first mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 7 is a section view describing a first mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 8 is a section view describing a first mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 9 is a section view describing a first mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 10 is a section view describing a first mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 11 is an enlarged plan view of the pattern of FIG. 10.

FIG. 12 is section view describing a third mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 13 is a section view describing a second mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 14 is a section view describing a second mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 15 is a section view describing a second mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 16 is a section view describing a second mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 17 is a section view describing a second mode for carrying out of amethod for manufacturing a protection circuit device using a MOSFET ofthe invention.

FIG. 18 is a characteristic view describing characteristic of MOSFETchip of the invention and the conventional way.

FIG. 19 is a circuit diagram of a protection circuit device using aMOSFET applied for the invention.

FIG. 20 is a plan view describing the conventional protection circuitdevice using a MOSFET.

FIG. 21 is a section view describing the conventional mounting structureof MOSFET.

FIG. 22 is a plan view describing the conventional mounting structure ofMOSFET.

FIG. 23 is a plan view describing the conventional mounting structure ofMOSFET.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The mode for carrying out the invention is described referring to FIG. 1to FIG. 19.

FIG. 1 shows a plan view of a protection circuit device using theinvention. Although circuit parts are mounted as the circuit shown inFIG. 19 is realized in the protection circuit device, the parts are notshown all in the figure. A conductive path 32 comprising copper foil isformed on both face of an insulating board 31, and has multilayerinterconnection where the conductive paths 32 of upper face and lowerface of the board are connected through through-hole (not shown) atdesired position.

Characteristic of the invention is to mount a MOSFET chip 33 integratingpower MOSFETs Q1 and Q2 of switching element in one chip with just barechip by flip chip method.

A structure of concrete structure of the MOSFET chip 33 is shown in FIG.33. FIG. 2A is a plan view, and FIG. 2B is a section view cut by X-Xline.

The MOSFET chip 33 has an N+/N semiconductor substrate 334 being drainregion, a P channel region 335, a trench 336 provided passing throughthe channel region 335, a gate electrode 338 buried in the trench 336through a gate oxide film 337 and comprising poly silicon, an N+ sourceregion 339 provided adjacent to the trench 336, and P+ body region 34Oforming a board diode provided adjacent to the source region 339. On aninsulating film 341 of a semiconductor substrate 334, a substrate sourceelectrode 342 contacting the source region 339 and the body region 340and formed by aluminum-sputtering, and a substrate gate electrode 343connected to the gate electrode 338. On the substrate source electrode342 and the substrate gate electrode 343, a barrier metal layer 344 ofPd/Ti or Au/TiW is provided, and on the layer a source electrode 331 anda gate electrode 332 of gold bump formed by gold plating of 25 μmheight. On entire back face of the semiconductor substrate 334, a drainelectrode 333 is provided by deposition of Au/Cr and so on.

The source electrode 331 and the gate electrode 332 of the power MOSFETsQ1 and Q2 are arranged symmetrically with respect to center line Y-Y ofthe chip as clear from FIG. 2A, the source electrodes 331 are providedat most part of the semiconductor substrate 334, the gate electrodes 332are provided symmetrically with respect to line largely separated atcorner portions of the semiconductor substrate 334. This is for easyfixing to the conductive path corresponding by flip chip method.

The source electrode 331 and the gate electrode 332 may be formed with asolder electrode bonding brazing material such as solder to a conductiveball, and a source electrode 221 and a gate electrode 222 may be usualflat electrodes enabling to solder without projecting electrodes becausethe conductive paths 32 are electrically separated.

First mode for carrying out describing a protection circuit device usingMOSFET

First, a structure of a protection circuit device using MOSFET of theinvention is described referring FIG. 3.

In FIG. 3, a mounting structure is shown. That is, a conductive path 32formed by desired copper foil or conductive paste so that the circuitshown in FIG. 19 is realized on an insulating board 31 formed by glassepoxy board or ceramic board is provided. On the conductive path 32,MOSFET chip 33 is fixed, and at least MOSFET chip 33 is covered by saidinsulating resin 34.

In the mounting structure, two source electrodes 331 and two gateelectrode 332 of the MOSFET chip 33 are contacted to a plural ofconductive paths 32A, 32B, 32C, and 32D, and fixed by solder or theconductive paste 35. On a drain electrode 333 of the MOSFET chip 33,solder or the conductive paste 35 fixes a conductive metal plate 36 suchas copper. The conductive metal plate 36 is provided in order todecrease ON-state resistance of power MOSFET Q1 and Q2 of the MOSFETchip 33 connected in series, and has an object too to improve radiationcharacteristic. Therefore forming by only solder or conductive paste 35instead of the conductive metal plate 36 can achieve the object todecrease ON-state resistance.

For the insulating resin 34, thermosetting resin such as epoxy resin andthermoplastic resin such as polyimide resin and polyphenylenesulfide areused. All kinds of resin are used if they are resins hardening using adie and covering by dipping and painting.

As the MOSFET chip 33 is fixed to the conductive path 32 by flip chipmethod in the mounting structure, it is not need to take the drainelectrode 333 of the MOSFET chip 33 out so that the structure withoutusing bonding wire is thin and expensive.

Great characteristic of the mounting structure is to especially takeconductive paths 21B and 21C out directly from the source electrode byflip chip method without bonding using bonding wire. Because of that, asclear from FIG. 18, in the invention, ON-state resistance of Sample C is8.67 mΩ and ON-state resistance of Sample D is 8.74 mΩ. Resistance ofboth samples is improved about 30% comparing with ON-state resistance12.10 mΩ of Sample B by the conventional wire bonding. At the same time,loop necessary for bonding wire is removed so as to make the insulatingresin 20 thin as much as the loop.

Second mode for carrying out describing a protection circuit deviceusing a MOSFET

A mounting structure of the second mode for carrying out of theprotecting circuit device using MOSFET of the invention is describedreferring FIG. 4.

FIG. 4 shows a mounting structure. That is, a conductive path 41 isburied in an insulating resin 40, on said conductive path 41 a MOSFETchip 33 is fixed, and the conductive path 41 is supported by saidinsulating resin 40.

The mounting structure comprises the MOSFET chip 33, a plural ofconductive paths 41A, 41B, 41C, and 41D, a conductive metal plate 36,and the an insulating resin 40 burying the conductive paths 41A, 41B,41C, and 41D. Between the conductive paths 41, a trench 42 filled withthe insulating resin 40 is provided. Said conductive paths 41 aresupported by the insulating resin 40.

For the insulating resin 34, thermosetting resin such as epoxy resin andthermoplastic resin such as polyimide resin and polyphenylenesulfide areused. All kinds of resin are used if they are resins hardening using adie and covering by dipping and painting.

For the conductive resin 41, a conductive foil of Cu as a main material,a conductive foil of Al as a main material, or a conductive foilcomprising alloy of Fe—Ni and so on is used. Of course other conductivematerial is possible, especially conductive material enable to etch andevaporate by laser are desirable.

The MOSFET chip 33 where the power MOSFET Q1 and Q2 are integrated inone chip is a semiconductor bare chip having a source electrode 331 anda gate electrode 332 at front face thereof, and at entire back face,having a drain electrode 333. A concrete structure of the MOSFET chip 33is described in FIG. 2, therefore description is omitted here

In connection of MOSFET chip 33, for the source electrode 331 and thegate electrode 332 are fixed to designated conductive paths 41A, 41B,41C, and 41D by brazing material such as solder and a conductive paste35 such as Ag paste, at a drain electrode 333 of back face, a conductivemetal plate 36 is fixed by brazing material such as solder and aconductive paste 35 such as Ag paste. The conductive metal plate 36 isprovided in order to decrease on-state resistance of power MOSFET Q1 andQ2 of the MOSFET chip 33 connected in series, and has an object too toimprove radiation characteristic. Therefore forming by only solder orconductive paste 35 instead of the conductive metal plate 36 can achievethe object to decrease ON-state resistance. Connection of the conductivemetal plate 36 to the other conductive path 41 is not need.

In the mounting structure, as the insulating resin 40 being sealingresin supports the conductive path 41, a supporting board is notnecessary. Therefore the structure consists of the conductive path 41,MOSFET chip 33, the conductive metal plate 36, and the insulating resin40, consists of necessary minimum elements so that the structure is thinand expensive.

The mounting structure has merit that each of the conductive paths 41 isinsulated by insulating resin 40 as the insulating resin 40 covers theMOSFET chip 33 and fills into said trench 42 between said conductivepaths 41 so as to have function supporting in one body.

Great characteristic of the mounting structure is to especially take theconductive paths 41B and 41C out directly from the source electrode 331by flip chip method without the conventional bonding using bonding wire.Because of that, as clear from FIG. 18, in the mounting structure of theinvention, ON-state resistance of Sample C (case taking out by solder)is 8.67 mΩ and ON-state resistance of Sample D (case taking out bysilver paste) is 8.74 mΩ. Resistance of both samples is improved about30% comparing with ON-state resistance 12.10 mΩ of Sample B by theconventional wire bonding. At the same time, loop necessary for bondingwire is removed so as to make the insulating resin 40 thin as much asthe loop.

In the mounting structure, front face of the insulating resin 40 filledinto the trench 42 and front face of the conductive path 41 aresubstantially in coincidence. Because of that, at mounting the mountingstructure on a printed board, the structure is automaticallyself-aligned as the structure can rise by surface tension of brazingmaterial such as solder and move horizontally.

Third mode for carrying out describing a protection circuit device usingMOSFET

Next, a third mounting structure of the protection circuit device usingMOSFET of the invention is described referring FIG. 12.

In the mounting structure, a conductive film 37 is formed on front faceof a conductive path 41, and excepting that, the structure issubstantially same as the structure of FIG. 4. Therefore the conductivefilm 37 is described.

First characteristic is a point that the conductive film 37 is providedto prevent bending of a conductive path or a circuit device.

Generally the mounting structure itself bends and the conductive pathcurves and peel off by difference of coefficient of thermal expansionbetween insulating resin and conductive path material (called firstmaterial hereafter). As thermal conductivity of the conductive path 41is superior than thermal conductivity of the insulating resin, theconductive path 41 expands previously by temperature rise. Because ofthat, covering a second material smaller coefficient of thermalexpansion than the first material can prevent bending and peeling off ofthe conductive path and bending of the mounting structure. Especially incase of using Cu for the first material, Au, Ni, or Pt is good for thesecond material. Coefficient of expansion of Cu is 16.7×10⁻⁶, Au is14×10⁻⁶, Ni is 12.8×10⁻⁶, and Pt is 8.9×10⁻⁶.

Second characteristic is a point that the structure has anchor effect bythe second material. Eaves are formed by the second material, further asthe eaves 38 fixing to the conductive path 41 are buried in theinsulating resin 40, anchor effect appears so as to prevent theconductive path 41 removing.

First mode for carrying out describing a method for manufacturing aprotection circuit device using MOSFET

Next, first method for manufacturing a protection circuit device usingMOSFET is described referring FIG. 5 to FIG. 11, and FIG. 4.

First, as FIG. 5 a sheet-shaped conductive foil 50 is provided. Materialof the conductive foil 50 is selected considering fix ability of brazingmaterial, bonding ability, and plating ability. For the material, aconductive foil of Cu as a main material, a conductive foil of Al as amain material, or a conductive foil comprising alloy such as Fe—Ni andso on is used.

Considering later etching, thickness of the conductive foil is 10 μm to300 μm desirably, here copper foil of 70 μm (2 oz.) is adopted. Howeverthe thickness of more than 300 μm or less than 10 μm is fundamentallyavailable. As described later, the thickness is good when the thinnertrench 42 than thickness of the conductive foil 50 is formed.

The sheet-shaped conductive foil 50 rolled in roll shape with designatedwidth or the conductive foil cut in designated size may be transferredto each later-mentioned process.

Next, there is a process removing the conductive foil 50 excepting atleast area becoming the conductive path 41 thinly than thickness of theconductive foil 50. There is a process covering the trench 42 and withan insulating resin 40 and the conductive foil 50 formed by the removingprocess.

First, a photo resist (etching-resist mask) PR is formed on a Cu foil50, and is patterned so that the conductive foil 50 excepting at leastarea becoming the conductive path 41 exposes (Refer FIG. 6 about theabove.) The conductive foil is etched through said photo resist PR(Refer FIG. 7 about the above.)

Depth of the trench 42 formed by etching is 50 μm for example, and theside thereof is coarse face so that adhesiveness to the insulating resin40 is improved.

Although the side wall of the trench 42 is shown in straightschematically, the structure differs depending on method of removing.For the process, wet etching and dry etching are used. In the case ofwet etching, for enchant, ferric chloride or cupric chloride is mainlyused, and said conductive foil is dipped into the enchant or showered bythe enchant. Here, as the conductive foil is generally etchednon-anisotropically, the trench 42 of inner part than an openingspreads, and the side face of the trench 42 becomes curved structurebeing side-etched.

In the case of dry etching, both etchings of anisotropy andnon-anisotropy are possible. Although it is said impossible to remove Cuby reactive ion etching, by using sputtering method, Cu can be removedeasily. Depending on sputtering condition, both etchings of anisotropyand non-anisotropy can be carried out.

In FIG. 6, a, conductive film having etching-tolerant against etchingliquid may be selectively covered instead of the photo resist. Byselectively covering a part where the conductive path is to be formedwith the conductive film, the conductive film acts as an etchingprotection film and therefore the trench can be formed without usingresist. Material for the conductive film is Ag, Au, Pt, or Pd. Moreoverthe etching-tolerant conductive film can be bonded easily and thereforecan be used as die pad and bonding pad alone.

Next, a MOSFET chip 33 is mounted on the conductive path 41 made of theconductive foil 50 separated by the trench 42.

MOSFET chip 33 is a semiconductor bare chip having a source electrode331 and a gate electrode 332 at front face thereof, and at entire backface, having a drain electrode 333. Pattern recognition is carried outby chip mounting apparatus facing the source electrode 331 and the gateelectrode 332 to lower side, and the MOSFET 33 is fixed by flip chipmethod with brazing material such as solder or the conductive paste 35contacting the each electrode to the conductive paths 41A and 41B, and41C and 41D.

A conductive metal board 36 comprising copper is fixed on a drainelectrode 333 provide at the back face of the MOSEET chip 33 by brazingmaterial such as solder or the conductive paste 25. As only the drainelectrode 333 exist at the back face of the MOSFET chip 33, theconductive metal plate 36 does, not short with other electrode. Asconnection of the conductive metal plate 36 and the conductive path 41is not necessary, it is possible to mount easily with rough positioningusing different-shaped parts mounter.

Further as shown in FIG. 9. There is a process fixing the insulatingresin 40 on said conductive foil 50 and the trench 42. This is realizedby transfer mould, injection mould, or dipping. For the insulating resin34, thermosetting resin such as epoxy resin is realizes by transfermould, and thermoplastic resin such as polyimide resin andpolyphenylenesulfide is realized by injection mould.

In the mode for carrying out, thickness of the insulating resin 40covered by surface of the conductive foil 50 is adjusted so as to coverabout 100 μm from top portion of the circuit element. It is possible tomake thickness thick or thin considering strength.

Characteristic of the process is that the conductive foil 50 becomingthe conductive path 41 functions as a supporting board till covering theinsulating resin 40. Although the conductive path is formed using thesupporting board in the past, the conductive foil 50 functioning as thesupporting board is material necessary as electrode material in theinvention. Therefore the invention has merit to operate makingcomposition material as few as possible, and can realize reduction ofcost.

As the trench 42 is formed thinly than thickness of the conductive foil,the conductive foil 50 is not separated individually as the conductivepath 41. Therefore the conductive foil is handled in one body as thesheet-shaped conductive foil 50, and the structure has characteristicthat operation of transfer to die and mounting on die is very easy.

Next, there is a process removing the back face of the conductive foil50 chemically and/or physically and separating as the conductive path41. Here the process is carried out polishing, grinding, etching, andmetal evaporation of laser.

In experiment, entire face is ground about 30 μm by polisher or grinderso that the insulating resin 40 is exposes from the trench 42. The faceis shown in FIG. 9 with dotted line. As the result, the conductive path41 is separated as a conductive path 41 of about 40 μm. After entireface of the conductive foil 50 is wet-etched till just before theinsulating resin 40 exposes, entire face may be grounded by polisher orgrinder so as to expose the insulating resin 40. Further entire face ofthe conductive foil 50 is wet-etched till position of dotted line, andthe insulating resin 40 may be exposed.

As the result, in the structure, surface of the conductive path 41exposes on the insulating resin 40. After that, the conductive foil 50is ground and becomes the trench 42. (Refer FIG. 9 about the above.)

Finally covering conductive material such as solder on the conductivepath 41 exposing at the back face of the insulating resin 40, themounting structure is completed.

In the case of covering the conductive film on the back face of theconductive path 41, the conductive film may be formed previously at theback face of the conductive foil of FIG. 5. In this case, a partcorresponding to the conductive path may be covered selectively. Methodof covering is plating for example. For the conductive film, materialresisting to etching is desirable. In the case of using the conductivefilm, the conductive path 41 can be separated only by etching withoutpolishing.

In the above-mentioned description of the method for manufacturing,although MOSFET 33 is described selectively as a circuit part, actuallymany circuit parts necessary for the protection circuit device of theinvention are mounted on the conductive foil 50 shown in FIG. 10including matrix shape MOSFET 33.

FIG. 10 shows a plan view of a board of the conductive foil 50 afterforming the trench 42. The board has size of 45 mm×60 mm, the conductivepath 41 is formed at the hatching part, and the separated part 42 isformed at the white part. Therefore part becoming the mounting structureis arranged in matrix shape, 3 row 8 line, and index marks 511 and indexholes using in process are provided at periphery thereof. Foe example,dicing lines are controlled at center of the index marks comprising twolines provided both ends of the board.

FIG. 11 is an enlarged plan view of a board of one conductive foil 50 ofFIG. 10. A MOSFET chip 33 is fixed on conductive paths 41A, 41B, 41C,and 41D shown at left side of the figure by flip chip method. A controlIC 9 is fixed to the conductive path 41 at center portion thereof, andat the conductive path 41 of periphery of the IC, chip capacitorscorresponding to C1 to C3 of FIG. 19 and chip resistors corresponding toR1 and R2 of the FIG. 19 are fixed using a chip mounter.

External terminals shown at four corners with LP1, LP2, LP3, and LP4correspond to terminals LP1 , LP2, LP3, and LP4 shown in FIG. 19.

Therefore many protection circuit device of the invention formed on theboard of the conductive foil 50 shown in FIG. 10 become an individualprotection circuit device using MOSFET by cutting at a part of theinsulating resin 40 of the trench 42 on dicing line shown with one dotchain line to directions of X axis and Y axis using dicing machine. Insuch the protection circuit device of the invention, the back face ofthe conductive path 41 is connected to the conductive path of theprinted board by brazing material such as solder in order to use.

By the above-mentioned method for manufacturing, the conductive path, 41is buried in the insulating resin 40 so as to realize the mountingstructure of the protection circuit device using flat MOSFET where theback face of the insulating resin 40 and the back face of the conductivepath 41.

Characteristic of the method for manufacturing is that operation ofseparating the conductive path 41 can be carried out using theinsulating resin 40 as a supporting board. The insulating resin 40 is anecessary material for material burying the conductive path 41, and thesupporting board is not need like the conventional method formanufacturing. Therefore the method has characteristic to manufacturewith minimum material and to realize reduction of cost.

Thickness of insulating resin from surface of the conductive path isadjusted at fixing of the insulating resin of front process. As theMOSFET chip 33 is fixed on the conductive path 41 by flip chip method inthe invention, bonding wire is excluded. Therefore depending onthickness of the MOSFET chip 33 mounted, the mounting structure hascharacteristic that thickness thereof is extremely made thin. Here themounting structure is buried in the insulating resin 40 of about 400 μmthick with the conductive path 41 of 40 μm thick and the MOSFET chip 33of about 200 μm thick. (Refer FIG. 4 about the above.)

Second mode for carrying out describing a method for manufacturing aprotection circuit device using MOSFET

Next, a method for manufacturing a mounting structure of a protectioncircuit device using MOSFET having eaves is described referring FIG. 12and FIG. 13 to FIG. 17. Except covering a second material 60 becomingeaves, the structure is substantially same as the first mode forcarrying out so that concrete description is omitted.

First as shown in FIG. 13, a conductive foil 50 covered on the aconductive foil 50 comprising a first material with the second material60 which is small in etching rate is provide.

For example when Ni is covered on Cu foil, Cu and Ni are etched at onetime by ferric chloride or cupric chloride, and difference of etchingrate forms Ni in shape of eaves 38 so that it is suitable. Thick solidline is the conductive film 60 comprising Ni, thickness thereof isdesirable to be 1 to 10 μm. The thicker the thickness of the film of Ni,the more easily the eaves is formed.

The second material may cover material selectively etching with thefirst material. In this case, by patterning a film comprising the secondmaterial so as to cover at forming area of a conductive path 41 and byetching a film comprising the first material using the film comprisingthe second material, eaves 38 is formed. For the second material, Al,Ag, and Au are considered. (Refer FIG. 13 about the above.)

The processes are the following: forming photo resist PR on Ni 60,patterning the photo resist so that Ni except area becoming theconductive path 41 exposes, and etching through said photo resist.

As above-mentioned, when etching is carried out using enchant of ferricchloride and cupric chloride, eaves 38 appears as advance of etching.

The following processes are same as the above-mentioned method formanufacturing: a process mounting the MOSFET 33 on the conductive foil50 forming said trench 42 (FIG. 16), a process covering said conductivefoil 50 and the trench 42 with the insulating resin 40 removing the backface of the conductive foil 40 chemically and/or physically, andseparating as the conductive path 41 (FIG. 17), and a process formingthe conductive film at the back face of the conductive path to complete(FIG. 12). Therefore the description is omitted.

Further the separating (dicing) step can be performed by forming notcheshaving a predetermined depth in the insulating resin by using a dicingsaw, and then separating respectively by using the notches as scribeline.

As clear from the above description, by leading out of the chip to aconductive path on a conductive pattern on circuit board, instead oflong wiring(leading) within a chip, the invention consists of minimumelements: the MOSFET chip integrating power MOSFETs Q1 and Q2 in onechip, the conductive path, the conductive metal plate, and theinsulating resin. The construction is a mounting'structure of protectioncircuit device using MOSFET useful for resource. Therefore the mountingstructure of the protection circuit device using MOSFET not having extracomponents till completion and reducing cost extremely.

Further, since a conductive path separated by an insulating resinembedded into a trench is used, fine pattern with high accuracy can beobtained and connecting reliability is very high. A thickness of thepattern being the conductive path for a whole thickness of the package,can be made large and therefor wiring resistance can be reduced verymuch. Therefore MOSFET chip can be mounted directly with flip-chip withhigh accuracy.

As the MOSFET chip is directly fixed on the conductive path by flip chipmethod, especially taking-out resistance from the source electrode tothe conductive path is removed so as to reduce ON-state resistance 30%comparing with the conventional mounting structure. Connecting commondrain electrode of the MOSFET within a chip is not necessary so as torealize extremely simple mounting structure.

In the mounting structure of the protection circuit device using MOSFETof the invention, bonding wire is not need, and by making thickness offilm of the insulating resin and thickness of the conductive foiloptimum value, height of the structure is made very thin less than 0.5mm, and at the same time small, light mounting structure is realized.

As only the back face of the conductive path exposes from the insulatingresin, the back face of the conductive path instantly connects tooutside without using the back face electrode and the through-holeneeded in the conventional structure.

As the front face of the trench and the front face of the conductivepath of the mounting structure has substantially fitting flat front faceand the circuit device itself is moved alone horizontally by surfacetension of solder at narrow pitch QFP mounting, correction of lead shiftbecomes very easy.

Because the second material is formed at front side of the conductivepath, bend of the mounting board, particularly bend of long and thinconductive path or peeling off is depressed by difference of coefficientof thermal expansion.

By forming the film comprising the second material on the front face ofthe conductive path, the eaves covered by the conductive path is formed.Therefore the eaves(visors) can cause anchor effect, and prevent bend ofthe conductive path and slipping out of the insulating resin.

In the method for manufacturing the protection circuit device using theMOSFET of the invention, the conductive foil itself becoming material ofthe conductive path functions as the supporting board, the conductivefoil supports the whole till forming the trench or mounting of MOSFETand covering the insulating resin. At separating the conductive foil aseach conductive path, the insulating resin functions as the supportingboard. Therefore the protection circuit device is manufactured bynecessary minimum of the MOSFET chip, the conductive foil, theinsulating resin. By that the supporting board is not need, theconductive path is buried in the insulating resin, and adjustingthickness of the insulating resin and the conductive foil and bondingwire is not need, a very thin mounting structure of the protectioncircuit device using MOSFET is realized.

Next, as the conductive path is handled without separating individuallytill the process removing thinly than thickness of the conductive foil(half-etching for example), many MOSFET chips are manufacturedintegrating on extremely small board so that operating ability isimproved.

As the conductive path and the insulating resin form the same plan, theboth are able to shift without touching side face of the conductive pathon the mounting board at mounting. Especially in the case that the bothare mounted with shifted position, it is possible to re-arrange shiftingto horizontal direction. If brazing material is melted after mounting,the device mounted with shift aims to return itself to upper portion bysurface tension of melted brazing material so that re-arrangement by thedevice itself is possible.

1-8. (Canceled)
 9. A method for manufacturing a protection circuitdevice using MOSFETs comprising the steps of: forming a trench on asurface of a conductive foil, except for a region to be a conductivepath, a thickness of the trench is thinner than that of the conductive;bonding each gate electrode and each source electrode of a MOSFET chipintegrating two MOSFETs on said desired conductive path in one chip;bonding conductive material on a common electrode of the MOSFET; moldingsaid MOSFET chip so as to be covered with insulating resin and to fillinto said trench; and removing said conductive foil of part of thicknesswhere said trench is not provided.
 10. A method for manufacturing aprotection circuit device using MOSFETs according to claim 9, whereinthe step of forming a trench comprises the steps of: forming anetching-tolerant conductive film on a region to be a conductive path ona surface of a conductive foil; and forming the trench by using theetching-tolerant conductive film as a mask.
 11. A method formanufacturing a protection circuit device using MOSFETs according toclaim 9, further comprising: dividing into a plurality of devices bysaid insulating resin, wherein the devices comprises each of chipmounting portions.
 12. A method for manufacturing a protection circuitdevice using MOSFETs, further comprising the step of: removing uniformlysaid conductive foil from a back face so that a back face of saidconductive path and said insulating resin embedded between said trench,are substantially flat face.
 13. A method for manufacturing a protectioncircuit device using MOSFETs according to claim 9, comprising the stepsof: forming a conductive path having a lot of mounting portions byforming a thinner separated groove than thickness of said leading foilon at least said leading foil except area becoming the leading path;bonding each gate electrode and each source electrode of a MOSFET chipintegrating two MOSFETs on said desired conductive path of each mountingportion in one chip; bonding conductive material on a common electrodeof the MOSFET; removing uniformly said conductive foil from a back faceso that a back face of said conductive path and said insulating resinembedded between said trench, are substantially flat face; and dividinginto a plurality of devices by said insulating resin, wherein thedevices comprises each of chip mounting portions.
 14. A method formanufacturing a protection circuit device using MOSFETs according toclaim 9, wherein said conductive foil consists of any of copper,aluminum, iron-nickel.
 15. A method for manufacturing a protectioncircuit device using MOSFETs according to claim 10, characterized bythat said conductive film is plated with any of nickel, gold and silver16. A method for manufacturing a protection circuit device using MOSFETsaccording to claim 9, wherein said trench formed selectively at saidconductive foil is formed by chemical or physical etching.
 17. A methodfor manufacturing a protection circuit device using MOSFETs according toclaim 15, wherein said conductive film is used as a part of a mask atforming said trench
 18. A method for manufacturing a protection circuitdevice using MOSFETs according to claim 9, wherein said conductivematerial is formed by a conductive metal plate or conductive brazingmaterial.
 19. A method for manufacturing a protection circuit deviceusing MOSFETs according to claim 9, wherein said insulating resin is apackage formed by transfer mould.
 20. A method for manufacturing aprotection circuit device using MOSFETs according to claim 11, whereinsaid dividing step comprises a step of forming notches having apredetermined depth by using a dicing saw and dividing into each of thechip mounting areas.